Paul DOLEJSCHI ; Manfred KRAMMER

2012
HEPHY Vienna

Abstract: The BELLE II experiment at the SuperKEKB-Factory is designed to investigate CP violation in the quark sector. SuperKEKB is an asymmetric electron-positron collider, colliding 7.0 GeV and 4.0 GeV electrons and positrons. The innermost part of the BELLE II detector consists of a pixel detector (PXD) and the Silicon Vertex Detector (SVD). Both the PXD and the SVD consist of silicon detectors. In this diploma thesis, different electrical measurements on the prototypes of silicon strip detectors for the SVD were performed. The author employed the Quality Test Center (QTC) at the HEPHY Vienna to develop new measurement methods for silicon strip sensors. The measurements of the interstrip resistance and the interstrip capacitance are new measurement methods that are subject to be incorporated into future quality assurance at the QTC. The measurements were performed on barrel sensors from Hamamatsu Photonics and on wedge sensors from Micron Semiconductor. Two differently shaped sensor types are the result of the asymmetry of the SuperKEKB collider. Both sensor types are double sided silicon sensors, for the measurement of which the QTC has been designed. The author has developed three LabView run measurement methods to measure the interstrip resistance and has performed frequency dependent capacitance measurements, also LabView run, to determine the interstrip capacitance. The results of these measurements have been cross checked with specifications given in the Belle II Technical Design Report and compared to results of publications of similar measurements by different work groups. In addition, the author has investigated sensor related effects that influence the measurement and has tried to improve the measurement accuracy. The findings of this diploma thesis will be important for future operation and improvement of the QTC Vienna, in order to perform quality assurance for serial production sensors, destined to be operated in high energy particle experiments all over the world. Also, they lie at the basis of better theoretical understanding of double sided silicon detectors.

Note: Presented on 01 08 2012
Note: Diploma